0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BAP64-04 features high voltage, current controlled rf resistor for rf attenuators and switches low diode capacitance low diode forward resistance low series inductance for applications up to 3 ghz. electrical characteristics ta = 25 parameter symbol conditions min typ max unit forward voltage v f i f = 50 ma 0.95 1.1 v v r = 175 v 10 v r =20v 1 v r = 0; f = 1 mhz 0.52 pf v r = 1 v; f = 1 mhz 0.37 0.5 pf v r = 20 v; f = 1 mhz 0.23 0.35 pf i f = 0.5 ma; f = 100 mhz; note 1 20 40 i f = 1 ma; f = 100 mhz; note 1 10 20 i f = 10 ma; f = 100 mhz; note 1 2 3.8 i f = 100 ma; f = 100 mhz; note 1 0.7 1.35 when switched from i f =10mato i r =6ma;r l = 100 , measured at i r =3ma series inductance l s 1.4 nh note 1. guaranteed on aql basis: inspection level s4, aql 1.0. a s charge carrier life time l 1.55 reverse leakage current v r diode forward resistance r d diode capacitance c d absolute maximum ratings ta = 25 parameter symbol min max unit continuous reverse voltage v r 175 v continuous forward current i f 100 ma total power dissipation ts = 90 p tot 250 mw storage temperature t stg -65 +150 junction temperature t j -65 +150 thermal resistance from junction to soldering point r th j-s 220 k/w marking marking 4kp sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
|
